(China (Mainland))
Product Summary
The JS28F128P30T is a StrataFlash memory device. Offered in 64-Mbit up through 1-Gbit densities, the JS28F128P30T device brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits of the device include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features of the JS28F128P30T include high-performance synchronousburst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices. The JS28F128P30T is manufactured using Intel 130 nm ETOXVIII process technology.
Parametrics
JS28F128P30T absolute maximum ratings: (1)Temperature under bias: –40 to +85℃; (2)Storage temperature: –65 to +125℃; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +4.1 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +4.1 V; (7)Output short circuit current: 100 mA.
Features
JS28F128P30T features: (1)High performance; (2)85/88 ns initial access; (3)40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode; (4)25 ns asynchronous-page read mode; (5)4-, 8-, 16-, and continuous-word burst mode; (6)Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ); (7)1.8 V buffered programming at 7 μs/byte (Typ); (8)Multi-Level Cell Technology: Highest Density at Lowest Cost; (9)Asymmetrically-blocked architecture; (10)Four 32-KByte parameter blocks: top or bottom configuration; (11)128-KByte main blocks.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 JS28F128P30T85A |
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IC FLASH 128MBIT 85NS 56TSOP |
Data Sheet |
Negotiable |
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JS28F128P30TF75A |
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IC FLASH 128MBIT 65NM 56TSOP |
Data Sheet |
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