(China (Mainland))
Product Summary
The FM24C16A-G is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for over 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM24C16A-G performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The FM24C16A-G is capable of supporting 1012 read/write cycles, or a million times more write cycles than EEPROM.
Parametrics
FM24C16A-G absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN, Voltage on any signal pin with respect to VSS: -1.0V to +7.0V; (3)and VIN < VDD+1.0V ; (4)TSTG, Storage Temperature: -55℃ to +125℃; (5)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (6)VESD, Electrostatic Discharge Voltage: Human Body Model (JEDEC Std JESD22-A114-B): 4kV; Charged Device Model (JEDEC Std JESD22-C101-A): 1kV; Machine Model (JEDEC Std JESD22-A115-A): 300V.
Features
FM24C16A-G features: (1)Organized as 2,048 x 8 bits; (2)High Endurance (1012) Read/Write Cycles; (3)45 year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 1MHz maximum bus frequency; (7)Direct hardware replacement for EEPROM; (8)5V operation; (9)150 μA Active Current (100 kHz); (10)10 μA Standby Current.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM24C16A-G |
Ramtron |
F-RAM 16K (2Kx8) 5V |
Data Sheet |
Negotiable |
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FM24C16A-GTR |
Ramtron |
F-RAM 16K (2Kx8) 5V |
Data Sheet |
Negotiable |
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