(China (Mainland))
Product Summary
The CA3096M is a kind of general purpose high voltage silicon transistor array. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit maximum flexibility in circuit design. The CA3096M is ideal for: (1)Five-Independent Transistors: Three NPN and Two PNP; (2)Differential Amplifiers; (3)DC Amplifiers; (4)Sense Amplifiers; (5)Level Shifters; (6)Timers; (7)Lamp and Relay Drivers; (8)Thyristor Firing Circuits; (9)Temperature Compensated Amplifiers; (10)Operational Amplifiers.
Parametrics
CA3096M absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCEO: NPN: 35V; PNP: -40V; (2)Collector-to-Base Voltage, VCBO: NPN: 45V; PNP: -40V; (3)Collector-to-Substrate Voltage, VCIO: NPN: 45V; (4)Emitter-to-Substrate Voltage, VEIO: PNP: -40V; (5)Emitter-to-Base Voltage, VEBO: NPN: 6V; PNP: -40V; (6)Collector Current, IC (All Types): NPN: 50mA; PNP: -10mA ; (7)Maximum Power Dissipation (Each Transistor): 200mW; (8)Maximum Junction Temperature (Plastic Package): 150℃; (9)Maximum Storage Temperature Range: -65℃ to 150℃; (10)Maximum Lead Temperature (Soldering 10s): 300℃ (SOIC - Lead Tips Only).
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